HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：397.83 Kbytes 页数：11 Pages

IRF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：4.00508 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：152.65 Kbytes 页数：10 Pages

IRF

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：395.05 Kbytes 页数：11 Pages

IRF

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：4.0085 Mbytes 页数：10 Pages

KERSEMI

IRFR120

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.70201 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.22483 Mbytes 页数：7 Pages

KERSEMI

HEXFET POWER MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120) • Str

文件：179.46 Kbytes 页数：6 Pages

IRF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：263.99 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax

文件：213.06 Kbytes 页数：12 Pages

IRF