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IRFU1205PBF中文资料PDF规格书
IRFU1205PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Ultra Low On-Resistance
• Surface Mount (IRFR1205)
• Straight Lead (IRFU1205)
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
产品属性
- 型号：
IRFU1205PBF
- 功能描述：
MOSFET MOSFT 55V 37A 27mOhm 43.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
I |
2020+ |
TO-251 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
23+ |
NA/ |
22811 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VBsemi |
21+ |
TO251 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBsemi |
2231+ |
TO251 |
3313 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
2018+ |
TO251 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-251 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
IR |
07+/08+ |
TO-251 |
1075 |
询价 | |||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-251-3 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
VBSEMI |
19+ |
TO-251 |
12000 |
询价 |
