isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.5A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：1.21942 Mbytes 页数：7 Pages

FOSHAN

蓝箭电子

isc N-Channel MOSFET Transistor

文件：270.47 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET/场效应管

BlueRocket

蓝箭电子

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 400V ■ Lower RDS(ON) : 0.437 Ω (Typ.)

文件：266.38 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：894.8 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：296.57 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：296.42 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体