isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.0A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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N-CHANNEL MOSFET in a TO-220F Plastic Package

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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isc N-Channel MOSFET Transistor

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ISC

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BlueRocket

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500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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FAIRCHILD

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Advanced Power MOSFET

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isc N-Channel MOSFET Transistor

文件：265 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体