IRFS830

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFS830

N-CHANNEL MOSFET in a TO-220F Plastic Package

IRFS830

N-Channel MOSFET uses advanced trench technology

IRFS830

isc N-Channel MOSFET Transistor

IRFS830

MOSFET/场效应管;

IRFS830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

IRFS830A

Advanced Power MOSFET;

IRFS830A

Advanced Power MOSFET

IRFS830A

isc N-Channel MOSFET Transistor