首页 >IRFP460APBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HighbrightnessopenframeLCDmonitor | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
HighbrightnessopenframeLCDmonitor | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
HighbrightnessopenframeLCDmonitor | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
HighbrightnessopenframeLCDmonitor | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.27ohm,Id=20A) Description ThirdGenerationHEXFET®sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFETs FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技 | Vishay | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.24ohm,Id=20A) SMPSMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent EffectiveCossspecified(SeeAN1001) Applications SwitchModePowerSupply | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
IRFP460APBF
- 功能描述：
MOSFET N-Chan 500V 20 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
22+23+ |
TO-247 |
28000 |
全新原装公司.柜台现货.特价热卖!绝对原装正品全新进口深圳现货
|
询价 | ||
IR |
13+ |
TO-247 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRFP460APBF,欢迎咨询洽谈。 |
询价 | ||
VISHAY |
23+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
询价 | ||
INFINEON |
21+ |
TO-247 |
30000 |
只做原装 只有原装 |
询价 | ||
VISHAY |
21+ |
TO-247 |
6880 |
只做原装,支持实单 |
询价 | ||
Vishay Siliconix |
23+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY |
13+ |
TO-247 |
15000 |
全新原装的现货 |
询价 | ||
23+ |
TO-247 |
12550 |
专注原装正品现货特价中量大可定 |
询价 | |||
VISHAY |
16+ |
TO-247 |
36000 |
原装正品,优势库存81 |
询价 | ||
VISHAY |
1912+ |
TO247 |
16850 |
绝对原装现货 |
询价 |
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