Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：333.88 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

文件：1.34866 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET ransistor

文件：409.62 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.98549 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.33852 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?

文件：1.34866 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.33852 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.33852 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.98549 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

• Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 VGS rating;

Vishay

威世