IRFP340R

isc N-Channel MOSFET Transistor

IRFS340

iscN-ChannelMOSFETTransistor

IRFS340

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.9A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFS340A

AdvancedPowerMosfet

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowerRDS(ON):0.437Ω(Typ.)

IRFS340A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

IRFS340B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRFY340

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

BVDSS400V ID8.7A RDS(on)0.55Ω FEATURES •HERMETICALLYSEALEDTO-220METALPACKAGE •SIMPLEDRIVEREQUIREMENTS •ALLLEADSISOLATEDFROMCASE •LIGHTWEIGHT •SCREENINGOPTIONSAVAILABLE

IRFY340

N?밅HANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRFY340

POWERMOSFETTHRU-HOLE(TO-257AA)

IRFY340C

POWERMOSFETTHRU-HOLE(TO-257AA)

PartNumberRDS(on)IDEyelets IRFY340C0.55Ω8.7ACeramic IRFY340CM0.55Ω8.7ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-st