Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：113.89 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

Infineon

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.30116 Mbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

文件：80.94 Kbytes 页数：2 Pages

KEXIN

科信电子

P-Channel 20 V (D-S) MOSFET

文件：1.0575 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Echo Canceler

GENERAL DESCRIPTION The MSM7603/7603B is an improved version of the MSM7602 with basically the same configuration, and offers twice the cancelable echo delay time of the MSM7602. The MSM7603B I/O interface allows switching between m-law PCM and A-law PCM. The MSM7603/7603B is a low-power CMOS I

文件：149.88 Kbytes 页数：20 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社