丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

文件：336.68 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description These P-Channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicat

文件：102.49 Kbytes 页数：9 Pages

IRF

HEXFET짰Power MOSFET

Description These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management appl

文件：153.08 Kbytes 页数：9 Pages

IRF

丝印：F7410；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES V(BR)DSS -20V RDS(ON) 8.5mΩ ID -14A

文件：3.06011 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：394.37 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

文件：1.84902 Mbytes 页数：6 Pages

KEXIN

科信电子

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：123.19 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.16 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：211.18 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description These HEXFET®Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive aval

文件：257.48 Kbytes 页数：9 Pages

IRF