零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MOSFET Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description TheseHEXFET®PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval | IRF International Rectifier | IRF | ||
Ultra Low On-Resistance SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
丝印:IRF7413;Package:SOP-8;Generation VTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
丝印:IRF7413;Package:SOP-8;MOSFET Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
N-Channel Enhancement Mode Power MOSFET GENERALFEATURES ©Vo=30Vlo124 Rosin | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
HEXFET Power MOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on) ●FullyCharacterizedAvalancheVoltageandCurrent ●100TestedforRG Applications ●ControlFETforNotebookProcessorPower ●ControlandSynchronousRectifier MOSFETforGraphicsCardsandPOL ConvertersinComputing,Netwo | IRF International Rectifier | IRF | ||
丝印:IRF7413;Package:SOP-8;30V N-Channel MOSFET Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI |
技术参数
- OPN:
IRF7410TRPBF
- Qualification:
Non-Automotive
- Package name:
SO8
- VDS max:
-12 V
- RDS (on) @4.5V max:
7 mΩ
- ID @25°C max:
-16 A
- QG typ @4.5V:
91 nC
- Polarity:
P
- VGS(th) min:
-0.4 V
- VGS(th) max:
-0.9 V
- VGS(th):
-0.65 V
- Technology:
IR MOSFET™
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
23+ |
SSOP |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
SILICONIX |
23+ |
65480 |
询价 | ||||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
询价 | ||
Harris |
23 |
公司优势库存 热卖中!! |
询价 | ||||
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
MOT |
23+ |
1176 |
67477 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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