Power MOSFET

Vishay

威世

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

Infineon

英飞凌

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

文件：224.02 Kbytes 页数：7 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：859.54 Kbytes 页数：10 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：896.45 Kbytes 页数：9 Pages

KERSEMI

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：333.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

文件：162.91 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

文件：301.06 Kbytes 页数：11 Pages

IRF

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

文件：162.91 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

文件：301.06 Kbytes 页数：11 Pages

IRF