IRF1010ZSPBF规格书批发供应IRFIRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010ZSPBF	文件：404.91 Kbytes Page：12 Pages	Advanced Process Technology 文件：404.91 Kbytes 页数：12 Pages	IRF	IRF
IRF1010ZSPBF	文件：359.06 Kbytes Page：13 Pages	HEXFET짰 Power MOSFET 文件：359.06 Kbytes 页数：13 Pages	IRF	IRF
IRF1010ZSPBF_15	文件：404.91 Kbytes Page：12 Pages	Advanced Process Technology 文件：404.91 Kbytes 页数：12 Pages	IRF	IRF
IRF1010ZSTRLPBF	文件：404.91 Kbytes Page：12 Pages	Advanced Process Technology 文件：404.91 Kbytes 页数：12 Pages	IRF	IRF
IRFI1010	文件：109.11 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：109.11 Kbytes 页数：8 Pages	IRF	IRF
IRFI1010N	文件：109.11 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：109.11 Kbytes 页数：8 Pages	IRF	IRF

更多IRF1010ZSPBF供应商更新时间2025-12-8 16:12:00