IRFI1010中文资料IRF数据手册PDF规格书
IRFI1010规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Fully Avalanche Rated
产品属性
- 型号：
IRFI1010
- 功能描述：
MOSFET MOSFT 55V 44A 12mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3294 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
12+ |
TO-220 |
84 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
05+ |
TO-220F |
25 |
询价 | |||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
NEW |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
25+ |
TO-220F |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
询价 |
