Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：109.11 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)

Infineon

英飞凌

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：109.11 Kbytes 页数：8 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

文件：260.589 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：234.13 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：235.09 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：235.09 Kbytes 页数：9 Pages

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220 FullPAK(Iso)封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌