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IRF530

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nDC-DC&DC-ACCONVERTER nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERSEtc.)

SYC

SYC Electronica

IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF530FI

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF530FI

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530FP

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12Ω ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■AVALANCHERUGGEDTECHNOLOGY ■APPLICATIONORIENTEDCHARACTERIZATION ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF530L

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530N

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF530N

PowerMOSFET(Vdss=100V,Rds(on)=90mohm,Id=17A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

详细参数

  • 型号:

    IRC530

  • 制造商:

    Vishay Angstrohm

  • 功能描述:

    Trans MOSFET N-CH 100V 14A 5-Pin(5+Tab) TO-220

  • 制造商:

    Vishay Semiconductors

  • 功能描述:

    MOSFET CURRENT SENSING TO-220-5

供应商型号品牌批号封装库存备注价格
INTERN.RECTI
05+
原厂原装
559
只做全新原装真实现货供应
询价
IR
23+
TO-220-5
1600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
23+
TO-220-5
5000
原装正品,假一罚十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-220-5
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
23+
TO-220-5L
65480
询价
IR
20+
TO-220-5
20500
汽车电子原装主营-可开原型号增税票
询价
IR
24+
TO220/5
6430
原装现货/欢迎来电咨询
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多IRC530供应商 更新时间2025-7-20 9:17:00