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IRFF210

2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?쏷RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

IRFF210

N-ChannelMOSFETinaHermeticallysealedTO39

N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5Ω

SEME-LAB

Seme LAB

IRFL210

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.96A)

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A

IRF

International Rectifier

IRFL210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210

SurfaceMount

KERSEMI

Kersemi Electronic Co., Ltd.

IRFL210

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210PBF

HEXFET짰PowerMOSFET

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free

IRF

International Rectifier

IRFL210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IR210-W

  • 制造商:

    Knoll Systems

  • 功能描述:

    Decora Wall Plate Style Infrared Receiver - White

  • 制造商:

    KNOLL SYSTEMS

  • 功能描述:

    IR REPEATER RECEIVER ONLY WHITE DECORA WALL TARGET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
SOP-8
4503
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
IR
22+
TO-
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-
8000
只做原装现货
询价
IR
23+
TO-
7000
询价
IOR
23+
DIP16
3500
绝对全新原装!现货!特价!请放心订购!
询价
IR
25+
DIP14L
1100
强调现货,随时查询!
询价
IR
1215+
DIP-14
150000
全新原装,绝对正品,公司大量现货供应.
询价
IR
03+
原厂原装
6000
自己公司全新库存绝对有货
询价
更多IR210-W供应商 更新时间2025-5-16 16:33:00