IR210-W资料datasheet下载供应价格威世科技-114ic电子网

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IRFD210	文件：173.36 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210	文件：52.32 Kbytes Page：6 Pages	0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc	Intersil Intersil Corporation	Intersil
IRFD210	文件：360.56 Kbytes Page：6 Pages	0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	HARRIS Harris Corporation	HARRIS
IRFD210	文件：1.6013 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210	文件：843.37 Kbytes Page：9 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210PBF	文件：1.79775 Mbytes Page：8 Pages	HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210PBF	文件：1.6013 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210PBF	文件：843.37 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFE210	文件：202.29 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R?쏷RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners	IRF International Rectifier	IRF
IRFE210	文件：161.95 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF

详细参数

型号：
IR210-W
制造商：
Knoll Systems
功能描述：
Decora Wall Plate Style Infrared Receiver - White
制造商：
KNOLL SYSTEMS
功能描述：
IR REPEATER RECEIVER ONLY WHITE DECORA WALL TARGET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	IR211	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
贸泽芯城（深圳）电子科技有限公司	IR211	IR	23+	SOP-8	4503	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市河锋鑫科技有限公司	IR211	IR	22+	TO-	6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IR211	IR	23+	TO-	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IR211	IR	23+	TO-	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IR211	IR	23+	TO-	7000		询价
深圳市毅创腾电子科技有限公司	IR2110	IOR	23+	DIP16	3500	绝对全新原装!现货!特价!请放心订购!	询价
深圳市福安瓯科技有限公司	IR2110	IR	25+	DIP14L	1100	强调现货,随时查询!	询价
深圳市勤思达科技有限公司	IR2110	IR	1215+	DIP-14	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市星佑电子有限公司	IR2110	IR	03+	原厂原装	6000	自己公司全新库存绝对有货	询价

更多IR210-W供应商更新时间2025-5-16 16:33:00

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