丝印：65R060F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.42371 Mbytes 页数：14 Pages

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英飞凌

集成快速体二极管的 650 V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

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英飞凌

Package：8-PowerSFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：HIGH POWER_NEW

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英飞凌

650V CoolMOS짧 CFD7 SJ Power Device

文件：1.35037 Mbytes 页数：14 Pages

Infineon

英飞凌