OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：418.76 Kbytes 页数：12 Pages

INFINEON

英飞凌

MOSFET N-CH 25V 50A TO-251

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

文件：313.44 Kbytes 页数：10 Pages

INFINEON

英飞凌

25V N-Channel Enhancement Mode MOSFET

文件：145.62 Kbytes 页数：4 Pages

PANJIT

強茂

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V, IDS@30A=6mΩ • RDS(ON), VGS@4.5V, IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：145.46 Kbytes 页数：4 Pages

PANJIT

強茂