extremely low losses due to very low fom rdson qg and eoss

文件：1.13537 Mbytes 页数：15 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

文件：335.75 Kbytes 页数：2 Pages

ISC

无锡固电

650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature

文件：1.16047 Mbytes 页数：14 Pages

INFINEON

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

Infineon

英飞凌

650V CoolMOS ™ CFD7 超结 MOSFET 集成快速体二极管，采用 TO-247 封装，是谐振高功率拓扑的完美选择

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

Infineon

英飞凌