首页 >IPW90R1K2C3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPW90R1K2C3 | CoolMOS??Power Transistor CoolMOS™PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPW90R1K2C3 | N-Channel MOSFET Transistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
IPW90R1K2C3
- 功能描述：
MOSFET COOL MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
25048 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INFINEON |
2021+ |
TO-247 |
9450 |
原装现货。 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-247 |
6 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON |
2016+ |
TO-247 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
INFINEON |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
询价 | ||
INFINEON |
23+ |
TO-247 |
5000 |
原装正品,假一罚十 |
询价 | ||
Infineon |
23+ |
TO-247 |
7750 |
全新原装优势 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
INF |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 |
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