25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V, IDS@30A=6mΩ • RDS(ON), VGS@4.5V, IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

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25V N-Channel Enhancement Mode MOSFET

Panjit

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N-Channel 20-V (D-S)175 C MOSFET

文件：902.42 Kbytes 页数：6 Pages

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25V N-Channel Enhancement Mode MOSFET

文件：143.59 Kbytes 页数：4 Pages

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N-Channel 30-V (D-S) MOSFET

文件：1.68919 Mbytes 页数：7 Pages

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N-Channel 20-V (D-S)175 C MOSFET

文件：1.46905 Mbytes 页数：6 Pages

VBSEMI

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