600V N-Channel Enhancement Mode MOSFET

FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：193.83 Kbytes 页数：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：193.83 Kbytes 页数：5 Pages

PANJIT

強茂

N-CHANNEL MOSFET in a TO-252 Package

文件：304.45 Kbytes 页数：5 Pages

RECTRON

丽正国际

Short Circuit Rated IGBT

文件：527.63 Kbytes 页数：7 Pages

Fairchild

仙童半导体