650V N-Channel Enhancement Mode MOSFET

FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：232.14 Kbytes 页数：6 Pages

PANJIT

強茂

650V N-Channel Enhancement Mode MOSFET

FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：232.14 Kbytes 页数：6 Pages

PANJIT

強茂

N-Channel 650V (D-S) Power MOSFET

文件：1.10604 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10581 Mbytes 页数：10 Pages

VBSEMI

微碧半导体