600V CoolMOS™ N-Channel Power MOSFET

\n优势:\n•  Best-in-class hard commutation ruggedness\n • Highest reliability for resonant topologies\n • Highest efficiency with outstanding ease-of-use/performance trade-off\n • Enabling increased power density solutions\n ;

Infineon

英飞凌

丝印：60R105F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.27127 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.16654 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.2577 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS??CFD7 Power Transistor

文件：1.045109 Mbytes 页数：14 Pages

INFINEON

英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.68362 Mbytes 页数：14 Pages

INFINEON

英飞凌