丝印：60R105F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.16654 Mbytes 页数：14 Pages

Infineon

英飞凌

英飞凌对谐振高功率拓扑的回答

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare • Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on) x Qg and Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topol;

Infineon

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.2577 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS??CFD7 Power Transistor

文件：1.045109 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.68362 Mbytes 页数：14 Pages

Infineon

英飞凌