首页 >IPI11N60C3A>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

SPB11N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB11N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPBI11N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI11N60C3

iscN-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI11N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP11N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP11N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IPI11N60C3A

  • 功能描述:

    MOSFET MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO-262
17184
原装进口假一罚十
询价
infineon/英飞凌
21+
TO-262
10000
原装现货假一罚十
询价
Infineon/英飞凌
24+
20000
全新、原装、现货
询价
INFINEON/英飞凌
24+
NA/
3732
原装现货,当天可交货,原型号开票
询价
INFINEON/英飞凌
22+
TO-262
20000
原装现货,实单支持
询价
ADI
23+
TO-262
8000
只做原装现货
询价
ADI
23+
TO-262
7000
询价
INFINEON
1503+
SMD
3000
就找我吧!--邀您体验愉快问购元件!
询价
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
24+
TO-262
723
原装现货假一赔十
询价
更多IPI11N60C3A供应商 更新时间2025-5-22 14:04:00