OptiMOS짰2 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：711.91 Kbytes 页数：13 Pages

Infineon

英飞凌

N-channel, normal level

文件：1.03806 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：547.15 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：711.91 Kbytes 页数：13 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤26mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.22 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel, normal level

文件：1.03806 Mbytes 页数：12 Pages

Infineon

英飞凌