首页 >IPB029N06N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
StrongIRFETTM2 Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelPowerTrench짰MOSFET60V,193A,3.1mW Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=2.4mΩ(Typ.)@VGS=10V,ID=75A •FastSwitc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Superiorthermalresistance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTMPower-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewOptiMOS??40Vand60V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewOptiMOS??40Vand60V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPB029N06N
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
OptiMOS?3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
8048 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17245 |
原装进口假一罚十 |
询价 | ||
IR |
23+ |
PG-TO263-3 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
2024+实力库存 |
TO-263 |
200 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON TECHNOLOGIES AG |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
D2PAK(TO-263) |
7500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON |
2017+ |
TO-263 |
26589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 |
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