首页 >IPA180N10N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 |  | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. |  | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | ||
100AvalancheTested | SEMIHOW SemiHow Co.,Ltd. | | ||
HighDenseCellDesign | SEMIHOW SemiHow Co.,Ltd. | | ||
100VN-ChannelTrenchMOSFET | SEMIHOW SemiHow Co.,Ltd. | | ||
HiPerFET-TMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features •ConformstoSOT-227Boutline •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance • | IXYS IXYS Integrated Circuits Division |  | ||
SingleMOSFETDie VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division | | ||
HiPerFETPowerMOSFETSingleMOSFETDie HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •Dynamicdv/dtRating •AvalancheRated •FastIntrinsicRectifier •LowRDS(on) •LowDrain-to-TabCapacitan | IXYS IXYS Integrated Circuits Division | | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
HiPerFETPowerMOSFETsISOPLUS247 VDSS=100V ID25=165A RDS(on)=8mΩ trr≤250ns SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | | ||
SingleMOSFETDie VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division | | ||
HiperFETPowerMOSFETs | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelEnhancementModeAvalancheRated TrenchMV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Ultra-lowOnResistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •175°COperatingTemperature Advantages •Easytomount •Spacesavings •High | IXYS IXYS Integrated Circuits Division | |
详细参数
- 型号：
IPA180N10N
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
OptiMOSTM3 Power-Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-220F |
19594 |
只做原装进口 免费送样!! |
询价 | ||
Infineon/英飞凌 |
22+ |
PG-TO220-3 |
18324 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-220FullPAK |
18500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-220FP |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
1436+ |
TO-220F |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
INFINEON |
2022+ |
5000 |
全现原装公司现货 |
询价 | |||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINEON |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
35700 |
正品授权货源可靠 |
询价 |
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