CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：371.47 Kbytes 页数：10 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • High fast switching Power Supply • FEATURES • Drain-source on-resistance: RDS(on) ≤ 0.5Ω@10V • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：330.9 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for CoolMOS™ C3 is CoolMOS™ P7\n 900V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：265.59 Kbytes 页数：10 Pages

INFINEON

英飞凌

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：298.47 Kbytes 页数：10 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.5Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.26 Kbytes 页数：2 Pages

ISC

无锡固电