IPB016N06L3G技术资料参数供应商报价英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPB016N06L3G	文件：330.39 Kbytes Page：9 Pages	OptiMOS?? Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qua 文件：330.39 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
AMIB016N06L3	文件：382.26 Kbytes Page：5 Pages	N-Channel 60-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed 文件：382.26 Kbytes 页数：5 Pages	ANALOGPOWER	ANALOGPOWER
IPB016N06L3	文件：330.39 Kbytes Page：9 Pages	OptiMOS?? Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qua 文件：330.39 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
IPB016N06L3GATMA1	文件：0 bytes Page：0 Pages	TO-263-7	INFINEON/英飞凌上传：深圳市大联智电子有限公司	INFINEON/英飞凌
IPB017N08N5	文件：0 bytes Page：0 Pages		INFINEON 英飞凌上传：深圳市毅创辉电子科技有限公司	INFINEON

更多IPB016N06L3G供应商更新时间2026-10-21 9:38:00