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IPA60R750E6

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R750E6

600V CoolMOS E6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R750E6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R750E6_14

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IIPD60R750E6

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R750E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD60R750E6

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD60R750E6

600VCoolMOSE6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R750E6

600VCoolMOSE6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R750E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R750E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPA60R750E6

  • 功能描述:

    MOSFET N-CH 650V 5.7A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
22+
T0220
49
只做原装进口 免费送样!!
询价
INFINEON/英飞凌
21+23+
TO-220FullPAK
18500
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
Infineon/英飞凌
23+
TO-220F
30000
全新原装现货特价销售,欢迎来电查询
询价
Infineon(英飞凌)
23+
TO-220
8145
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
2017+
TO-220
35556
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
INFINEON
2016+
TO-220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
INFINEO
2020+
TO220
11
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON
1249+
TO-220F
70
进口原装现货假一赔十
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
INFINEON
2018+
TO-220F
11256
只做进口原装正品!假一赔十!
询价
更多IPA60R750E6供应商 更新时间2024-4-29 16:37:00