High Dense Cell Design

文件：241.03 Kbytes 页数：7 Pages

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文件：921.24 Kbytes 页数：8 Pages

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HiPerFET-TM Power MOSFET

HiPerFET Power MOSFET Single Die MOSFET Features • Conforms to SOT-227B outline • Encapsulating epoxy meets UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance •

文件：78.29 Kbytes 页数：2 Pages

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VDSS = 100V ID25 = 180A RDS(on) ≤ 8mΩ Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features International Standard Packages High Current Handling Capability Avalanche Rated Low RDS(on) HDMOSTM Process Fast intrinsic diode

文件：111.52 Kbytes 页数：4 Pages

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