IMZ120R045M1

Marking：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Widegate-sourcevoltagerange Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltage Fullycontrollabledv/dt Commutationrobustbodydiode,readyforsynchronousrectification Eas

IMZ120R060M1H

Marking：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltageforeasyandsimplegatedrive FullycontrollabledV/dt Robustbodydiodeforhardcommutation Temperatureindependentturn-offs

IMZ1A

Marking：Z1；Package：SOT-26；General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

IMZ1A

Marking：Z1；Package：SOT-26；General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

IMZ1A

Marking：Z1；Package：SMT6；General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

IMZ1A

Marking：Z1；Package：SMT6；General purpose transistor

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

IMZ1AT108

General purpose transistor

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

IMZ120R030M1H

Marking：12M1H030；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMZ120R090M1H

Marking：12M1H090；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMZ120R140M1H

Marking：12M1H140；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET