丝印：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Eas

文件：1.48644 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off s

文件：1.27807 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：Z1；Package：SOT-26；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：SMT6；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：SMT6；General purpose transistor

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：Z1；Package：SOT-26；General purpose transistor (dual transistors)

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：102.34 Kbytes 页数：5 Pages

ROHM

罗姆

General purpose transistor

Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure NPN /

文件：88.33 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：12M1H030；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27998 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M1H090；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27812 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M1H140；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27815 Mbytes 页数：17 Pages

Infineon

英飞凌