丝印：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Eas

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CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These in • Best in class switching and conduction losses\n• Benchmark high threshold voltage, Vth > 4 V\n• Short-circuit robustness, 3 µs\n• Robust and low loss body diode rated for hard commutation\n• IGBT-compatible gate driving, +15V for turn-on\n• Driver source pin for optimized switching performance\n\n;

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.44426 Mbytes 页数：17 Pages

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CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

文件：1.26225 Mbytes 页数：17 Pages

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.38579 Mbytes 页数：17 Pages

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