IMZ120R045M1

Marking：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Widegate-sourcevoltagerange Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltage Fullycontrollabledv/dt Commutationrobustbodydiode,readyforsynchronousrectification Eas

IMW120R045M1

Marking：120M1045；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET