丝印：121；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：775.92 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：121；Package：UMT3；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be negatively biased. The insulation also el

文件：928.97 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：121；Package：SOT-23；Silicon temperature sensors

General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are encapsulated in the small plastic Surface Mounted Device (SMD) SOT23 package. Other special selec

文件：79.72 Kbytes 页数：17 Pages

恩XP

丝印：121；Package：SOT-23；Silicon temperature sensors

General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are encapsulated in the small plastic Surface Mounted Device (SMD) SOT23 package. Other special selec

文件：79.72 Kbytes 页数：17 Pages

恩XP

丝印：121；Package：SOT-89-3；3-TERMINAL NEGATIVE VOLTAGE REGULTOR

■ FEATURES ● Full Compatible with NJM79L00UA ● Output Current 100 mA ● Output Voltage Accuracy VO ±4.0 ● Operating Temperature Ta = −40°C to 125°C ● High Ripple Rejection ● Overcurrent Protection ● Thermal Shutdown ● Bipolar Process ● Package SOT-89-3 ■ APPLICATIONS ● Industrial Equip

文件：467.51 Kbytes 页数：21 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：121；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：121；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：121；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：945.87 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：121；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：904.7 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：121；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 页数：10 Pages

LEIDITECH

雷卯电子