丝印：1216YWWD；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

Description The TF1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -16A RDS(ON TYP) 12mΩ @ VGS=-4.

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拓锋半导体