丝印：120N85；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM120N85AT2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：1.29669 Mbytes 页数：7 Pages

RECTRON

丝印：120N85；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

文件：202.36 Kbytes 页数：7 Pages

RECTRON