IMW120R045M1

Marking：120M1045；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMW120R045M1XKSA1

CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

AIMW120R045M1

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

IMBG120R045M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

IMZ120R045M1

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Widegate-sourcevoltagerange Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltage Fullycontrollabledv/dt Commutationrobustbodydiode,readyforsynchronousrectification Eas