型号：RM120N40LD；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：734.47 Kbytes 页数：9 Pages

型号：RM120N40LD；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

文件：714.04 Kbytes 页数：7 Pages

型号：RM120N40T2；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：219.19 Kbytes 页数：7 Pages