丝印：120N；Package：9BumpWLCSP；Compact High Efficiency Low Power Buck-Boost Regulator

文件：685.02 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：120N；Package：9BumpWLCSP；Compact High Efficiency Low Power Buck-Boost Regulator

文件：685.02 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：120N；Package：12Ld3x3TQFN；Compact High Efficiency Low Power Buck-Boost Regulator

文件：683.9 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：120N03；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：514.58 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：120N12LS；Package：PG-TDSON-8；OptiMOSTM 2 Power-Transistor, 120 V

Features • N-channel, logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-

文件：1.44876 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：120N60EC；Package：ITO-220AB-F；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 120mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals:

文件：567.82 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：120N60EC；Package：TO-247AD-3LD；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 120mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-247AD-3LD package  Terminals

文件：582.3 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：120N60EC；Package：TO-220AB-L；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 120mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals:

文件：565.83 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：120N06LS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON), VGS@10V, ID@20A

文件：1.36546 Mbytes 页数：7 Pages

PANJIT

強茂

丝印：120N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N30T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

文件：217.33 Kbytes 页数：8 Pages

RECTRON

丽正国际