丝印：120N60EC；Package：TO-220AB-L；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 120mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals:

文件：565.83 Kbytes 页数：7 Pages

PANJIT

強茂

超级结MOSFET (600 - 650V)

Panjit

強茂

E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：154.34 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：193.5 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：193.54 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司