IMZ120R045M1中文资料CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package数据手册Infineon规格书

描述 Description

The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

特性 Features

• Best in class switching and conduction losses
• Benchmark high threshold voltage, Vth > 4 V
• Short-circuit robustness, 3 µs
• Robust and low loss body diode rated for hard commutation
• IGBT-compatible gate driving, +15V for turn-on
• Driver source pin for optimized switching performance

优势:
• Highest efficiency
• Reduced cooling effort
• Higher frequency operation
• Increased power density
• Reduced system complexity

应用 Application

• Solutions for solar energy systems
• EV-Charging
• Uninterruptible power supply (UPS)
• SMPS
• Motor Control and Drives
• Energy storage