丝印：A120M1045；Package：PG-TO247-3-41；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

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汽车用 CoolSiC ™ MOSFET 是为混合动力和电动汽车中当前和未来的车载充电器和 DC-DC 应用而开发的。

The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.\n The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight o • Revolutionary semiconductor material - Silicon Carbide\n• Very low switching losses\n• Threshold-free on state characteristic\n• IGBT-compatible driving voltage (15V for turn-on)\n• 0V turn-off gate voltage\n• Benchmark gate threshold voltage, VGS(th)=4.5V\n• Fully controllable dv/dt\n• Commutatio;

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.44426 Mbytes 页数：17 Pages

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CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.38579 Mbytes 页数：17 Pages

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Eas

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