IRFM250D

N–CHANNELPOWERMOSFET

VDSS200V ID(cont)27.4A RDS(on)0.100Ω FEATURES •N–CHANNELMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •HERMETICISOLATEDTO-254PACKAGE •CERAMICSURFACEMOUNTPACKAGE OPTION

IRFN250

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A)

RDS(on)0.100Ω ID27.4A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRFN250

N?밅HANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

IRFN250

SimpleDriveRequirements

IRFN250SMD

N-CHANNELPOWERMOSFET

IRFP250

N-ChannelPowerMosfets

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava

IRFP250

N-Channel(HexfetTransistors)

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide