IHW40T60中文资料分立式IGBT数据手册Infineon规格书

描述 Description

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特性 Features

·Lowest V ce(sat) drop for lower conduction losses
·Low switching losses
·Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
·Very soft, fast recovery anti-parallel Emitter Controlled Diode
·High ruggedness, temperature stable behavior
·Low EMI emissions
·Low gate charge
·Very tight parameter distribution

应用 Application

  · UPS
· Solar Inverters
· Major Home Appliances
· Welding
· Air conditioning
· Industrial Drives
·Other hard switching applications

简介

IHW40T60属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHW40T60晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。