IHW30N60T数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

IGBT 600V in TRENCHSTOP™ and Fieldstop technology with optimised diode. 

特性 Features

• Best-in-class V CEsatand V f for outstanding efficiency
• Lowest switching losses
• Stable temperature behavior
• Soft current turn-off waveforms
• High breakthrough voltage
• Resistance to current spikes over the SOA

优势:
• Lowest power dissipation
• Better thermal management
• Lower cost for heat sink, cooling and EMI filtering
• Highest device safety and reliability
• Reduced system costs
• Best-in-class performance for competitive price

简介

IHW30N60T属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHW30N60T晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。