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IHW30N60T

Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IHW30N60T

Soft Switching Series

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IHW30N60T

Positive temperature coefficient in VCE

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IHW30N60T_08

Soft Switching Series

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IHW30N60T_13

Positive temperature coefficient in VCE

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IHW30N60TFKSA1

包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 60A 187W TO247-3

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

AIKW30N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

AR30N60

ACTIVE/SYNCHRONOUSRECTIFIER

DIODESDiodes Incorporated

达尔科技

DIODES

BIDW30N60T

BIDW30N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Inc.

伯恩斯(邦士)

Bourns

DAM30N60C

N-ChannelEnhancementModeMOSFET

DACO

DACO

DACO

DAM30N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO

DACO

DAM30N60S

N-ChannelEnhancementModeMOSFET

DACO

DACO

DACO

FGA30N60LSD

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGA30N60LSDTU

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGH30N60LSD

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGH30N60LSDTU

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGW30N60VD

DiscreteIGBT(High-SpeedVseries)600V/30A

FujiFUJI CORPORATION

株式会社FUJI

Fuji

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

详细参数

  • 型号:

    IHW30N60T

  • 功能描述:

    IGBT 晶体管 LOW LOSS DuoPack 600V 30A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
标准封装
17048
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
21+
TO-247
4800
专营原装正品现货,当天发货,可开发票!
询价
英飞翎
17+
TO-247
31518
原装正品 可含税交易
询价
INFINEON
2017+
原厂封装
25896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
23+
5000
专业模块销售,欢迎咨询
询价
INFINEON
08+(pbfree)
PG-TO247-3
8866
询价
INFINEO
2020+
TO-247
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON
23+
TO247
8600
全新原装现货
询价
INF
16+
TO-3P
10000
全新原装现货
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IHW30N60T供应商 更新时间2024-4-25 11:30:00