IHW30N120R3数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The 3rd generation of reverse conducting 1200 V, 30 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

特性 Features

• Best-in-class conduction properties in VCEsatand Vf
• Lowest switching losses, highest efficiency
• Excellent thermal behavior
• Tj(max)= 175°C
• Soft current turn-off waveforms for low EMI

优势:
• Lowest power dissipation
• Better thermal management
• Surge current capability for lower EMI filtering requirements
• Reduced system costs
• Highest reliability against peak currents

简介

IHW30N120R3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHW30N120R3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。